Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application

Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure

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Novel attributes of steep-slope staggered type heterojunction p-channel electron-hole bilayer tunnel field effect transistor

In this paper, the electrical characteristics and sensitivity analysis of staggered type p-channel heterojunction electron-hole bilayer tunnel field effect transistor (HJ-EHBTFET) are thoroughly investigated via simulation study. The minimum lattice mismatch between InAs/GaAs0.1Sb0.9 layers besides low carrier effective mass of materials provides high probability ...

Inter-band Tunnel Transistor Architecture using Narrow Gap Semiconductors

The inter-band tunnel transistor (TFET) architecture features a subkT/q sub-threshold slope operation and can potentially support high ION/IOFF ratios over small gate voltages. Based on twodimensional numerical simulations, we investigate TFET in various material systems ranging from silicon to indium arsenide. TFET performance can be enhanced when heterojunctions are employed at the source sid...